Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors
	Li RY (Li R. Y.) ; Wang ZG (Wang Z. G.) ; Xu B (Xu B.) ; Jin P (Jin P.) ; Guo X (Guo X.) ; Chen M (Chen M.)
刊名	applied physics a-materials science & processing
	2007
卷号	86 期号:1 页码:19-22
关键词	SURFACE-EMITTING LASERS VERTICAL-CAVITY LASERS OXIDATION MICROSTRUCTURE ALXGA1-XAS
ISSN号	0947-8396
通讯作者	li, ry, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: ryli@red.semi.ac.cn
中文摘要	the interface of wet oxidized al0.97ga0.03as/gaas in a distributed bragg reflector (dbr) structure has been studied by means of transmission electron microscopy and raman spectroscopy. with the extension of oxidation time, the oxide/gaas interfaces are not abrupt any more. there is an amorphous film near the oxide/gaas interface, which is ga2o3 related to the prolonged heating. in the samples oxidized for 10 and 20 min, there are some fissures along the oxidized algaas/gaas interfaces. in the samples oxidized or in situ annealed for long time, no such fissures are present due to the complete removal of the volatile products.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10312]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li RY ,Wang ZG ,Xu B ,et al. Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors[J]. applied physics a-materials science & processing,2007,86(1):19-22.
APA	Li RY ,Wang ZG ,Xu B ,Jin P ,Guo X ,&Chen M .(2007).Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors.applied physics a-materials science & processing,86(1),19-22.
MLA	Li RY ,et al."Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors".applied physics a-materials science & processing 86.1(2007):19-22.