×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [13]
内容类型
期刊论文 [8]
会议论文 [5]
发表日期
2011 [1]
2008 [1]
2006 [2]
2004 [1]
2002 [4]
2000 [3]
更多...
学科主题
半导体材料 [13]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共13条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
收藏
  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 073903
Shi, H
;
Duan, Y
收藏
  |  
浏览/下载:44/2
  |  
提交时间:2010/03/08
HIGH CURIE-TEMPERATURE
SPINODAL-DECOMPOSITION
ROOM-TEMPERATURE
1ST PRINCIPLES
THIN-FILMS
SEMICONDUCTORS
FERROMAGNETISM
STABILIZATION
GROWTH
PHASE
Evolution of wetting layer in InAs/GaAs quantum dot system
期刊论文
nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83
Chen YH (Chen Y. H.)
;
Ye XL (Ye X. L.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
quantum dots
wetting layer
reflectance difference spectroscopy
segregation
Influence of dislocation stress field on distribution of quantum dots
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:
Xu B
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/04/11
stress
surface structure
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
STRAIN
THICKNESS
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
SHORT-PERIOD SUPERLATTICES
RAMAN-SCATTERING
QUANTUM-WELLS
GROWTH
ROUGHNESS
SEGREGATION
ALAS/GAAS
ALAS
GAAS
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:63/4
  |  
提交时间:2010/08/12
reflectance-difference spectroscopy
indium segregation
InGaAs/GaAs quantum wells
EPITAXY-GROWN INGAAS/GAAS
SURFACE SEGREGATION
INTERFACE
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
reflectance-difference spectroscopy
indium segregation
InGaAs/GaAs quantum wells
EPITAXY-GROWN INGAAS/GAAS
SURFACE SEGREGATION
INTERFACE
Space-grown SI-GaAs and its application
会议论文
12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
SEMIINSULATING GALLIUM-ARSENIDE
FLOATING-ZONE GROWTH
CRYSTAL-GROWTH
ZERO GRAVITY
MICROGRAVITY
SEGREGATION
STOICHIOMETRY
SILICON
DEFECTS
INSB
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者:
Zhang SM
收藏
  |  
浏览/下载:92/4
  |  
提交时间:2010/08/12
crystal morphology
doping
surface structure
metalorgamc chemical vapor deposition
nitrides
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
FILMS
CATHODOLUMINESCENCE
Semi-insulating GaAs grown in outer space
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 134-138
Chen NF
;
Zhong XR
;
Lin LY
;
Xie X
;
Zhang M
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/08/12
GaAs
outer space
microgravity
integrated circuit
SEMIINSULATING GALLIUM-ARSENIDE
LEC-GAAS
DEFECTS
STOICHIOMETRY
SEGREGATION
CARBON
BORON
©版权所有 ©2017 CSpace - Powered by
CSpace