已选(0)清除
条数/页: 排序方式:
|
| ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:24/0  |  提交时间:2010/04/11
|
| Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文 electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170 作者: Ye XL ; Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:77/0  |  提交时间:2010/04/11
|
| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文 journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706 作者: Ye XL ; Xu B ; Jin P![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:90/0  |  提交时间:2010/04/11
|
| Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures 期刊论文 nanotechnology, 2005, 卷号: 16, 期号: 12, 页码: 2785-2789 作者: Jin P ; Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:53/0  |  提交时间:2010/04/11
|
| Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文 science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814 Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:326/7  |  提交时间:2010/04/11
|
| Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文 science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260 作者: Zhang SM ; Zhao DG![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:84/5  |  提交时间:2010/08/12
|
| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文 journal of crystal growth, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46 作者: Xu B ; Ye XL![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:77/2  |  提交时间:2010/08/12
|
| Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 55-60 Lin F; Wu J; Jiang WH; Cui H; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:102/5  |  提交时间:2010/08/12
|
| Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368 Wang XD; Niu ZC; Feng SL; Miao ZH
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:93/3  |  提交时间:2010/08/12
|
| X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文 journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32 Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:49/0  |  提交时间:2010/08/12
|