Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures
	Jin P; Xu B
刊名	nanotechnology
	2005
卷号	16 期号:12 页码:2785-2789
关键词	DOT INFRARED PHOTODETECTORS INAS/GAAS QUANTUM DOTS ROOM-TEMPERATURE SPECTROSCOPY PHOTOCONDUCTIVITY HETEROSTRUCTURES TRANSITIONS LASERS WELLS INP
ISSN号	0957-4484
通讯作者	lei, w, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: ahleiwen@red.semi.ac.cn
中文摘要	the interband and intraband photocurrent properties of inas/inalas/inp nanostructures have been studied. the doping effect on the photoluminescence properties of the quantum dots and the anisotropy of the quantum wire interband photocurrent properties are presented and discussed. with the help of interband excitation, an intraband photocurrent signal of the inas nanostructures is observed. with the increase of the interband excitation power, the intraband photocurrent signal first increases and then decreases, which can be explained by the variance of the ground state occupation of the inas nanostructures and the change of the mobility and lifetime of the electrons. the temperature dependence of the intraband photocurrent signal of the inas nanostructures is also investigated.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10902]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Xu B. Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures[J]. nanotechnology,2005,16(12):2785-2789.
APA	Jin P,&Xu B.(2005).Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures.nanotechnology,16(12),2785-2789.
MLA	Jin P,et al."Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures".nanotechnology 16.12(2005):2785-2789.