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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  Xu B
收藏  |  浏览/下载：51/3  |  提交时间：2011/07/05
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG
收藏  |  浏览/下载：71/5  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05
Enhancement of light trapping in thin-film solar cells through Ag 期刊论文
chinese optics letters, 2011, 卷号: 9, 期号: 3, 页码: article no.32901
作者:  Zhang H;  Yin ZG;  Zhang XW;  Huang TM
收藏  |  浏览/下载：17/0  |  提交时间：2011/07/05
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands 期刊论文
optics express, 2011, 卷号: 19, 期号: 2, 页码: 1065-1071
作者:  Wei TB
收藏  |  浏览/下载：43/4  |  提交时间：2011/07/05
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：196/52  |  提交时间：2010/04/28

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