×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [79]
内容类型
期刊论文 [72]
会议论文 [7]
发表日期
2011 [8]
2010 [9]
2009 [5]
2008 [5]
2007 [7]
2006 [9]
更多...
学科主题
半导体材料 [79]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共79条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
收藏
  |  
浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
作者:
Wei HY
收藏
  |  
浏览/下载:59/8
  |  
提交时间:2011/07/05
SENSITIZED SOLAR-CELLS
PHOTOCATALYZED TRANSFORMATION
CHLOROAROMATIC DERIVATIVES
ZINC-OXIDE
FILMS
POWDER
PHENOL
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
收藏
  |  
浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films
期刊论文
ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Zhang, Feng
;
Sun, Guosheng
;
Huang, Huolin
;
Wu, Zhengyun
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Yan, Guoguo
;
Zheng, Liu
;
Dong, Lin
;
Zeng, Yiping
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/06/14
Integrated circuits
Metal insulator boundaries
Photodetectors
Semiconducting silicon compounds
Semiconductor insulator boundaries
Silicon carbide
High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films
期刊论文
ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Zhang F (Zhang Feng)
;
Sun GS (Sun Guosheng)
;
Huang HL (Huang Huolin)
;
Wu ZY (Wu Zhengyun)
;
Wang L (Wang Lei)
;
Zhao WS (Zhao Wanshun)
;
Liu XF (Liu Xingfang)
;
Yan GG (Yan Guoguo)
;
Zheng L (Zheng Liu)
;
Dong L (Dong Lin)
;
Zeng YP (Zeng Yiping)
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/02/22
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
收藏
  |  
浏览/下载:75/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films
期刊论文
physical review b, 2010, 卷号: 81, 期号: 23, 页码: art. no. 235201
Khazen K (Khazen Kh.)
;
von Bardeleben HJ (von Bardeleben H. J.)
;
Cantin JL (Cantin J. L.)
;
Mauger A (Mauger A.)
;
Chen L (Chen L.)
;
Zhao JH (Zhao J. H.)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/06/18
AMORPHOUS FERROMAGNET
CURIE-TEMPERATURE
CRITICAL-BEHAVIOR
RENORMALIZATION GROUP
DIPOLAR INTERACTIONS
CRITICAL EXPONENTS
MAGNETIC EQUATION
ALLOYS
STATE
SEMICONDUCTORS
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
©版权所有 ©2017 CSpace - Powered by
CSpace