Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films

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	Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films
	Khazen K (Khazen Kh.) ; von Bardeleben HJ (von Bardeleben H. J.) ; Cantin JL (Cantin J. L.) ; Mauger A (Mauger A.) ; Chen L (Chen L.) ; Zhao JH (Zhao J. H.)
刊名	physical review b
	2010
卷号	81 期号:23 页码:art. no. 235201
关键词	AMORPHOUS FERROMAGNET CURIE-TEMPERATURE CRITICAL-BEHAVIOR RENORMALIZATION GROUP DIPOLAR INTERACTIONS CRITICAL EXPONENTS MAGNETIC EQUATION ALLOYS STATE SEMICONDUCTORS
通讯作者	khazen, k, univ paris 06, cnrs, umr 7588, inst nanosci paris, 140 rue lourmel, f-75015 paris, france.
合作状况	国际
英文摘要	ga1-xmnxas films with exceptionally high saturation magnetizations of approximate to 100 emu/cm(3) corresponding to effective mn concentrations of x(eff)approximate to 0.10 still have a curie temperature t-c smaller than 195 k contradicting mean-field predictions. the analysis of the critical exponent beta of the remnant magnetization-beta = 0.407(5)-in the framework of the models for disordered/amorphous ferromagnets suggests that this limit on t-c is intrinsic and due to the short range of the ferromagnetic interactions resulting from the small mean-free path of the holes. this result questions the perspective of room-temperature ferromagnetism in highly doped gamnas.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-18t14:45:55z no. of bitstreams: 1 intrinsically limited critical temperatures of highly doped ga1-xmnxas thin films.pdf: 381049 bytes, checksum: 6708a87185de2521a6718ffcd1d1f1fb (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-18t14:46:18z (gmt) no. of bitstreams: 1 intrinsically limited critical temperatures of highly doped ga1-xmnxas thin films.pdf: 381049 bytes, checksum: 6708a87185de2521a6718ffcd1d1f1fb (md5); made available in dspace on 2010-06-18t14:46:18z (gmt). no. of bitstreams: 1 intrinsically limited critical temperatures of highly doped ga1-xmnxas thin films.pdf: 381049 bytes, checksum: 6708a87185de2521a6718ffcd1d1f1fb (md5) previous issue date: 2010; 国际
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-06-18 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11332]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Khazen K ,von Bardeleben HJ ,Cantin JL ,et al. Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films[J]. physical review b,2010,81(23):art. no. 235201.
APA	Khazen K ,von Bardeleben HJ ,Cantin JL ,Mauger A ,Chen L ,&Zhao JH .(2010).Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films.physical review b,81(23),art. no. 235201.
MLA	Khazen K ,et al."Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films".physical review b 81.23(2010):art. no. 235201.