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| Photorefractive effects in ZnO nanorod doped liquid crystal cell 期刊论文
applied optics, 2011, 卷号: 50, 期号: 8, 页码: 1101-1104
作者: Guo YB
  收藏 | 浏览/下载：71/7 | 提交时间：2011/07/05
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| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者: Duan RF
收藏 | 浏览/下载：80/4 | 提交时间：2011/07/05
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| Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者: Shi K; Jiao CM; Song HP
收藏 | 浏览/下载：94/7 | 提交时间：2011/07/05
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| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者: Pan X
收藏 | 浏览/下载：20/0 | 提交时间：2011/09/14
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| Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏 | 浏览/下载：41/0 | 提交时间：2010/12/28
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| Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者: Zhang SM
收藏 | 浏览/下载：252/65 | 提交时间：2010/08/12
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| High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY
收藏 | 浏览/下载：31/0 | 提交时间：2010/10/29
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| Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation 期刊论文
journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 1-8
Luo MC; Li JM; Wang QM; Sun GS; Wang L; Li GR; Zeng YP; Lin LY
收藏 | 浏览/下载：47/0 | 提交时间：2010/08/12
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| Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者: Zhao DG
收藏 | 浏览/下载：299/12 | 提交时间：2010/08/12
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| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者: Zhang SM
收藏 | 浏览/下载：92/4 | 提交时间：2010/08/12
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