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Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118
Gu YX (Gu, Yong-Xian); Yang XG (Yang, Xiao-Guang); Ji HM (Ji, Hai-Ming); Xu PF (Xu, Peng-Fei); Yang T (Yang, Tao)
收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02
An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.73504
Lin L; Zhen HL; Zhou XH; Li N; Lu W; Liu FQ
收藏  |  浏览/下载：41/5  |  提交时间：2011/07/05
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.18401
作者:  Deng QW;  Hou QF;  Bi Y;  Yin HB
收藏  |  浏览/下载：41/5  |  提交时间：2011/07/05
Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
physica b-condensed matter, 2011, 卷号: 406, 期号: 1, 页码: 73-76
作者:  Hou QF;  Yin HB;  Deng QW
收藏  |  浏览/下载：100/9  |  提交时间：2011/07/05
Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films 会议论文
international materials research conference, chongqing, peoples r china, jun 09-12, 2008
作者:  Sun BJ;  Zhao DG
收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma 期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH; Liao XB; Diao HW; Kong GL; Zeng XB; Xu YY
收藏  |  浏览/下载：33/3  |  提交时间：2010/03/09
Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 77-84
作者:  Han PD
收藏  |  浏览/下载：75/5  |  提交时间：2010/08/12
Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 107-112
Wang HL; Ning D; Zhu HJ; Chen F; Wang H; Wang XD; Feng SL
收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12
The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490
Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998
Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG
收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29

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