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科研机构
半导体研究所 [28]
内容类型
期刊论文 [21]
会议论文 [7]
发表日期
2011 [1]
2010 [1]
2006 [5]
2004 [2]
2003 [1]
2002 [5]
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学科主题
半导体材料 [28]
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.)
;
Zhang XW (Zhang X. W.)
;
Fan YM (Fan Y. M.)
;
Tan HR (Tan H. R.)
;
Yin ZG (Yin Z. G.)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/12/28
Cubic boron nitride
Doping
Ion beam assisted deposition
X-ray photoelectron spectroscopy
RAY PHOTOELECTRON-SPECTROSCOPY
VAPOR-DEPOSITION
SI
NUCLEATION
GROWTH
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Liu XF (Liu Xing-Fang)
;
Sun GS (Sun Guo-Sheng)
;
Li JM (Li Jin-Min)
;
Zhao YM (Zhao Yong-Mei)
;
Li JY (Li Jia-Ye)
;
Wang L (Wang Lei)
;
Zhao WS (Zhao Wan-Shun)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2010/04/11
SPECTROSCOPY
GROWTH
POLYTYPES
SILICON
Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1972-1975
Xu Y (Xu Ying)
;
Hu ZH (Hu Zhihua)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Zeng XB (Zeng Xiangbo)
;
Hao HY (Hao Huiying)
;
Liao XB (Liao Xianbo)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
silicon
solar cells
heterojunctions
nanocrystals
CRYSTALLINE SILICON
LAYER
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903
Hu ZH (Hu Zhihua)
;
Liao XB (Liao Xianbo)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
silicon
solar cells
photovoltaics
Raman scattering
MICROCRYSTALLINE SILICON
SI NANOCRYSTALS
VOLUME FRACTION
RAMAN
CRYSTALLINITY
FILMS
Light-induced changes in diphasic nanocrystalline silicon films and solar cells
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1904-1908
Hao HY (Hao Huiying)
;
Liao XB (Liao Xianbo)
;
Zeng XB (Zeng Xiangbo)
;
Diao HW (Diao Hongwei)
;
Xu Y (Xu Ying)
;
Kong GL (Kong Guanglin)
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/04/11
silicon
OPEN-CIRCUIT VOLTAGE
AMORPHOUS-SILICON
RAMAN-SPECTROSCOPY
STABILITY
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.)
;
Liu, XF (Liu, X. F.)
;
Gong, QC (Gong, Q. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Li, JY (Li, J. Y.)
;
Zeng, YP (Zeng, Y. P.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:166/18
  |  
提交时间:2010/03/29
4H-SiC
Annealing ambient controlled deep defect formation in InP
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Zeng YP
;
Sun NF
;
Sun TN
收藏
  |  
浏览/下载:20/1
  |  
提交时间:2010/10/29
FE-DOPED INP
SEMIINSULATING INP
POINT-DEFECTS
PRESSURE
WAFERS
TRAPS
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
SHORT-PERIOD SUPERLATTICES
RAMAN-SCATTERING
QUANTUM-WELLS
GROWTH
ROUGHNESS
SEGREGATION
ALAS/GAAS
ALAS
GAAS
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:
Zhao DG
收藏
  |  
浏览/下载:299/12
  |  
提交时间:2010/08/12
metalorganic chemical vapor deposition
nitrides
semiconductor III-V materials
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
CHEMICAL-VAPOR-DEPOSITION
INTERMEDIATE LAYER
ALAS
ALN
SURFACES
SILICON
FILMS
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