Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
	Sun, GS (Sun, G. S.) ; Liu, XF (Liu, X. F.) ; Gong, QC (Gong, Q. C.) ; Wang, L (Wang, L.) ; Zhao, WS (Zhao, W. S.) ; Li, JY (Li, J. Y.) ; Zeng, YP (Zeng, Y. P.) ; Li, JM (Li, J. M.)
	2006
会议名称	11th conference on defects recognition imaging and physics in semiconductors
会议日期	sep 13-19, 2005
会议地点	beijing, peoples r china
关键词	4H-SiC
页码	9 (1-3): 275-278
通讯作者	sun, gs, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: gshsun@red.semi.ac.cn
中文摘要	the morphological defects and uniformity of 4h-sic epilayers grown by hot wall cvd at 1500 degrees c on off-oriented (0001) si faces are characterized by atomic force microscope, nomarski optical microscopy, and micro-raman spectroscopy. typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like sic epilayers. the preparation of the substrate surface is necessary for the growth of high-quality 4h-sic epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 elsevier ltd. all rights reserved.
英文摘要	the morphological defects and uniformity of 4h-sic epilayers grown by hot wall cvd at 1500 degrees c on off-oriented (0001) si faces are characterized by atomic force microscope, nomarski optical microscopy, and micro-raman spectroscopy. typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like sic epilayers. the preparation of the substrate surface is necessary for the growth of high-quality 4h-sic epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 elsevier ltd. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI（ISTP）
会议录	materials science in semiconductor processing
会议录出版者	elsevier sci ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england
会议录出版地	the boulevard, langford lane, kidlington, oxford ox5 1gb, oxon, england
学科主题	半导体材料
语种	英语
ISSN号	1369-8001
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9998]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun, GS ,Liu, XF ,Gong, QC ,et al. Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces[C]. 见:11th conference on defects recognition imaging and physics in semiconductors. beijing, peoples r china. sep 13-19, 2005.