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CORC

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An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839
Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
2DEG  
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文
science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814
Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H
收藏  |  浏览/下载：325/7  |  提交时间：2010/04/11
Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power 期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964
Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG
收藏  |  浏览/下载：298/3  |  提交时间：2010/04/11
Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
作者:  Xu B;  Jiang DS;  Wang ZG
收藏  |  浏览/下载：84/7  |  提交时间：2010/08/12
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
journal of crystal growth, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
作者:  Xu B;  Ye XL
收藏  |  浏览/下载：77/2  |  提交时间：2010/08/12
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Gao F; Huang DD; Li JP; Kong MY; Sun DZ; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载：149/5  |  提交时间：2010/08/12
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 457-460
Gao F; Huang DD; Li JP; Lin YX; Kong MY; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载：89/0  |  提交时间：2010/08/12
GSMBE  SiGe alloy  doping  SIMS  HBT  current gain  SI  

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