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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO 期刊论文 acs applied materials & interfaces, 2010, 卷号: 2, 期号: 6, 页码: 1780-1784 Dong JJ (Dong J. J.); Zhang XW (Zhang X. W.); You JB (You J. B.); Cai PF (Cai P. F.); Yin ZG (Yin Z. G.); An Q (An Q.); Ma XB (Ma X. B.); Jin P (Jin P.); Wang ZG (Wang Z. G.); Chu PK (Chu Paul K.) 收藏  |  浏览/下载：152/22  |  提交时间：2010/07/05 hydrogen plasma treatment  zinc oxide  Raman spectroscopy  photoluminescence  RAMAN-SCATTERING  IMPLANTED ZNO  THIN-FILMS  DENSITY   Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504 Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：213/46  |  提交时间：2010/10/11 INAS/ALSB QUANTUM-WELLS  LOW-POWER APPLICATIONS  HEMTS  MODULATION  HETEROSTRUCTURES  TECHNOLOGY  CHANNEL  VOLTAGE  MASS   Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157 作者:  Wei TB;  Wei XC;  Duan RF 收藏  |  浏览/下载：84/6  |  提交时间：2010/03/08 HRXRD  PL  Stacking fault  HVPE  GaN  Semipolar   Synthesis and optical properties of europium-doped ZnS: Long-lasting phosphorescence from aligned nanowires 期刊论文 advanced functional materials, 2005, 卷号: 15, 期号: 11, 页码: 1883-1890 Cheng BC; Wang ZG 收藏  |  浏览/下载：105/18  |  提交时间：2010/03/17 ONE-DIMENSIONAL NANOSTRUCTURES   Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2002, 卷号: 17, 期号: 9, 页码: 957-960 Lu LW; Yan H; Yang CL; Xie MH; Wang ZG; Wang J; Ge WK 收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12 PHOTOLUMINESCENCE  ENERGY   Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Kang JY; Shen YW; Wang ZG 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 defects  GaN  photoluminescence  electronic structures  YELLOW LUMINESCENCE  EPITAXIAL-FILMS  MG   Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 303-307 Kang JY; Shen YW; Wang ZG 收藏  |  浏览/下载：90/4  |  提交时间：2010/08/12 defects  GaN  photoluminescence  electronic structures  YELLOW LUMINESCENCE  EPITAXIAL-FILMS  MG   Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers 期刊论文 journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 548-553 Wang SZ; Xie SW; Pang QJ; Zheng H; Xia YX; Ji RB; Wu Y; He L; Zhu ZM; Li GH; Wang ZP 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 MBE  ZnSe : Cl  photoluminescence  quenching mechanisms  QUANTUM-WELLS