Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

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	Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
	Kang JY ; Shen YW ; Wang ZG
	2002
会议名称	9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix)
会议日期	sep 24-28, 2001
会议地点	rimini, italy
关键词	defects GaN photoluminescence electronic structures YELLOW LUMINESCENCE EPITAXIAL-FILMS MG
页码	303-307
通讯作者	kang jy xiamen univ dept phys xiamen 361005 peoples r china.
中文摘要	photoluminescence (pl) was investigated in undoped gan from 4.8 k to room temperature. the 4.8 k spectra exhibited recombinations of free exciton, donor-acceptor pair (dap), blue and yellow bands (ybs). the blue band (bb) was also identified to be a dap recombination. the yb was assigned to a recombination from deep levels. the energy-dispersive x-ray spectroscopy show that c and o are the main residual impurities in undoped gan and that c concentration is lower in the epilayers with the stronger bb. the electronic structures of native defects, c and o impurities, and their complexes were calculated using ab initio local-density-functional (ldf) methods with linear muffin-tin-orbital and 72-atomic supercell. the theoretical analyses suggest that the electron transitions from o-n states to c-n and to v-ga states are responsible for dap and the bb, respectively, and the electron transitions between the inner levels of the c-n-o-n complex may be responsible for the yb in our samples. (c) 2002 elsevier science b.v. all rights reserved.
英文摘要	photoluminescence (pl) was investigated in undoped gan from 4.8 k to room temperature. the 4.8 k spectra exhibited recombinations of free exciton, donor-acceptor pair (dap), blue and yellow bands (ybs). the blue band (bb) was also identified to be a dap recombination. the yb was assigned to a recombination from deep levels. the energy-dispersive x-ray spectroscopy show that c and o are the main residual impurities in undoped gan and that c concentration is lower in the epilayers with the stronger bb. the electronic structures of native defects, c and o impurities, and their complexes were calculated using ab initio local-density-functional (ldf) methods with linear muffin-tin-orbital and 72-atomic supercell. the theoretical analyses suggest that the electron transitions from o-n states to c-n and to v-ga states are responsible for dap and the bb, respectively, and the electron transitions between the inner levels of the c-n-o-n complex may be responsible for the yb in our samples. (c) 2002 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:12导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:12z (gmt). no. of bitstreams: 1 2874.pdf: 136574 bytes, checksum: f24d819a27bc172fa9e5d90f9ccdd456 (md5) previous issue date: 2002; xiamen univ, dept phys, xiamen 361005, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	materials science and engineering b-solid state materials for advanced technology, 91
会议录出版者	elsevier science sa ; po box 564, 1001 lausanne, switzerland
会议录出版地	po box 564, 1001 lausanne, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0921-5107
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14899]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kang JY,Shen YW,Wang ZG. Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers[C]. 见:9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix). rimini, italy. sep 24-28, 2001.