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CORC

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An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 498-508
Zuo R (Zuo Ran); Zhang H (Zhang Hong); Liu XL (Liu Xiang-lin)
收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11
GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition 期刊论文
journal of crystal growth, 2003, 卷号: 255, 期号: 1-2, 页码: 52-56
Chen DJ; Shen B; Bi ZX; Zhang KX; Gu SL; Zhang R; Shi Y; Zheng YD; Sun XH; Wan SK; Wang ZG
收藏  |  浏览/下载：470/1  |  提交时间：2010/08/12
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 527-531
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH
收藏  |  浏览/下载：81/6  |  提交时间：2010/08/12
Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions 期刊论文
thin solid films, 1999, 卷号: 346, 期号: 1-2, 页码: 91-95
Poulsen PR; Wang MX; Xu J; Li W; Chen KJ; Wang GH; Feng D
收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12
Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 535-540
Liu JP; Kong MY; Li JP; Liu XF; Huang DD; Sun DZ
收藏  |  浏览/下载：33/0  |  提交时间：2010/08/12
Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy 期刊论文
journal of crystal growth, 1997, 卷号: 181, 期号: 4, 页码: 441-445
Liu JP; Liu XF; Li JP; Sun DZ; Kong MY
收藏  |  浏览/下载：18/0  |  提交时间：2010/11/17
INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION 期刊论文
journal of applied physics, 1991, 卷号: 70, 期号: 8, 页码: 4172-4175
LI CR; MAI ZH; CUI SF; ZHOU JM; WANG YT
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15

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