INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION

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	INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION
	LI CR ; MAI ZH ; CUI SF ; ZHOU JM ; WANG YT
刊名	journal of applied physics
	1991
卷号	70 期号:8 页码:4172-4175
关键词	CHEMICAL VAPOR-DEPOSITION SOLAR-CELL APPLICATIONS MOLECULAR-BEAM EPITAXY SI HETEROSTRUCTURES SUPERLATTICES
ISSN号	0021-8979
通讯作者	li cr chinese acad sciinst physbeijing 100080peoples r china
中文摘要	gaas epilayer films on si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. the rocking curves were recorded for different diffraction vectors of samples. the results show that the unit-cell volumes of gaas epilayers are smaller than that of the gaas bulk material. the strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. the parameter w' = w(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-b) is introduced to describe the quality of different depths of epilayers. as the x-ray incident angle is increased, w' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. therefore, w' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. the cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14249]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	LI CR,MAI ZH,CUI SF,et al. INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION[J]. journal of applied physics,1991,70(8):4172-4175.
APA	LI CR,MAI ZH,CUI SF,ZHOU JM,&WANG YT.(1991).INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION.journal of applied physics,70(8),4172-4175.
MLA	LI CR,et al."INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION".journal of applied physics 70.8(1991):4172-4175.