Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions

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	Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions
	Poulsen PR ; Wang MX ; Xu J ; Li W ; Chen KJ ; Wang GH ; Feng D
刊名	thin solid films
	1999
卷号	346 期号:1-2 页码:91-95
关键词	chemical vapour deposition germanium nanostructures structural properties AMORPHOUS-SILICON GERMANIUM CRYSTALLINE DISCHARGE CELL POLYCRYSTALLINE SILICON FILMS
ISSN号	0040-6090
通讯作者	chen kj,nanjing univ,natl lab state microstruct,nanjing 210093,peoples r china.
中文摘要	nanocrystalline ge:h thin films were deposited simultaneously on both electrodes of a conventional capacitively coupled reactor for plasma enhanced chemical vapor deposition using highly h-2 diluted geh4 as the source gas. the structure of the films was investigated by raman scattering and x-ray diffraction as a function of substrate temperature, h-2 dilution, and r.f. power. the hydrogen concentrations and bonding configurations were determined by infrared absorption spectroscopy. for anodic deposition, the preferred crystallographic orientation and film crystallinity depend rather strongly on the deposition parameters. this dependence can be explained by changing surface mobilities of adsorbed precursors due to changes in the hydrogen coverage of the growing surface. cathodic deposition is much less sensitive to variations in the deposition parameters. it generally results in films of high crystallinity with randomly oriented crystallizes. some possible mechanisms for these differences between anodic and cathodic deposition are discussed. (c) 1999 elsevier science s.a. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12876]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Poulsen PR,Wang MX,Xu J,et al. Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions[J]. thin solid films,1999,346(1-2):91-95.
APA	Poulsen PR.,Wang MX.,Xu J.,Li W.,Chen KJ.,...&Feng D.(1999).Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions.thin solid films,346(1-2),91-95.
MLA	Poulsen PR,et al."Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions".thin solid films 346.1-2(1999):91-95.