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A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 53701
Zhao DG; Zhang S; Jiang DS; Zhu JJ; Liu ZS; Wang H; Zhang SM; Zhang BS; Yang H
收藏  |  浏览/下载:17/0  |  提交时间:2012/02/06
Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文
optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Zhou ZW (Zhou Zhiwen); He JK (He Jingkai); Wang RC (Wang Ruichun); Li C (Li Cheng); Yu JZ (Yu Jinzhong)
收藏  |  浏览/下载:86/0  |  提交时间:2010/08/17
Electroluminescence from Ge on Si substrate at room temperature 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 9, 页码: art. no. 092102
作者:  Su SJ;  Xue CL
收藏  |  浏览/下载:52/1  |  提交时间:2010/03/08
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文
ieee photonicsglobal at singapore, singapore, singapore, dec 08-11, 2008
Wang, LS; Zhao, LJ; Pan, JQ; Zhang, W; Wang, H; Liang, S; Zhu, HL; Wang, W
收藏  |  浏览/下载:31/0  |  提交时间:2010/03/09
Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012115
Wu, YL; Zhang, LW; Xie, GL; Zhu, JL; Chen, YH
收藏  |  浏览/下载:63/3  |  提交时间:2010/03/08
Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 19, 页码: art. no. 192107
Fan, HB; Sun, GS; Yang, SY; Zhang, PF; Zhang, RQ; Wei, HY; Jiao, CM; Liu, XL; Chen, YH; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:78/32  |  提交时间:2010/03/08
ZNO FILMS  GROWTH  DIODES  GAN  
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007
Shou-Li Z; De-Ping X; Ya-Li I; Hai-Lin C; Yin-Zhe C; Ang M; Ji-He L; Jun-Hua G
收藏  |  浏览/下载:45/0  |  提交时间:2010/03/09
Fabrication of Ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 3, 页码: 735-737
Shi WH; Mao RW; Zhao L; Luo LP; Wang QM
收藏  |  浏览/下载:74/0  |  提交时间:2010/04/11
In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385
作者:  Liu C
收藏  |  浏览/下载:18/0  |  提交时间:2010/03/17
doping  


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