Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

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	Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
	Fan, HB ; Sun, GS ; Yang, SY ; Zhang, PF ; Zhang, RQ ; Wei, HY ; Jiao, CM ; Liu, XL ; Chen, YH ; Zhu, QS ; Wang, ZG
刊名	applied physics letters
	2008
卷号	92 期号:19 页码:art. no. 192107
关键词	ZNO FILMS GROWTH DIODES GAN
ISSN号	0003-6951
通讯作者	fan, hb, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: hbfan@semi.ac.cn ; qszhu@semi.ac.cn
中文摘要	the valence band offset (vbo) of the wurtzite zno/4h-sic heterojunction is directly determined to be 1.61 +/- 0.23 ev by x-ray photoelectron spectroscopy. the conduction band offset is deduced to be 1.50 +/- 0.23 ev from the known vbo value, which indicates a type-ii band alignment for this heterojunction. the experimental vbo value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between zno, sic, and gan. (c) 2008 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6634]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Fan, HB,Sun, GS,Yang, SY,et al. Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy[J]. applied physics letters,2008,92(19):art. no. 192107.
APA	Fan, HB.,Sun, GS.,Yang, SY.,Zhang, PF.,Zhang, RQ.,...&Wang, ZG.(2008).Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy.applied physics letters,92(19),art. no. 192107.
MLA	Fan, HB,et al."Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy".applied physics letters 92.19(2008):art. no. 192107.