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| GeSn p-i-n photodetector for all telecommunication bands detection 期刊论文
optics express, 2011, 卷号: 19, 期号: 7, 页码: 6408-6413
Su SJ; Cheng BW; Xue CL; Wang W; Cao QA; Xue HY; Hu WX; Zhang GZ; Zuo YH; Wang QM
  收藏 | 浏览/下载：71/5 | 提交时间：2011/07/05
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| Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏 | 浏览/下载：128/4 | 提交时间：2010/04/13
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| Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏 | 浏览/下载：75/2 | 提交时间：2010/05/24
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| An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者: Wang YT ; Zhao DG; Zhang SM; Yang H; Jiang DS
收藏 | 浏览/下载：147/11 | 提交时间：2010/04/04
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| Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者: Zhang SM; Yang H; Yang H; Wang YT; Zhu JJ
收藏 | 浏览/下载：73/0 | 提交时间：2010/03/08
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| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者: Yang H; Jiang DS; Zhao DG; Zhang SM; Yang H
收藏 | 浏览/下载：91/41 | 提交时间：2010/03/08
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| Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W; Zhu JJ; Jiang S; Yang H; Wang JF
收藏 | 浏览/下载：33/0 | 提交时间：2010/03/29
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| Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui)
收藏 | 浏览/下载：40/0 | 提交时间：2010/03/29
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| Pressure-induced Raman-active radial breathing mode transition in single-wall carbon nanotubes 期刊论文
physical review b, 2007, 卷号: 75, 期号: 4, 页码: art.no.045425
Yang W; Wang RZ; Song XM; Wang B; Yan H
收藏 | 浏览/下载：92/0 | 提交时间：2010/03/29
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| Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏 | 浏览/下载：31/0 | 提交时间：2010/04/11
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