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CORC

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Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN 期刊论文
acs applied materials & interfaces, 2013, 卷号: 5, 期号: 12, 页码: 5797–5803
Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang
收藏  |  浏览/下载：27/0  |  提交时间：2014/04/09
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文
physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314
作者:  Wang H;  Wang H;  Yang;  Jiang DS
收藏  |  浏览/下载：122/5  |  提交时间：2010/04/28
GAN  ALLOYS  
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
作者:  Zhu JJ;  Yang H;  Yang H;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：231/10  |  提交时间：2010/04/13
Ferromagnetic modification of GaN film by Cu+ ions implantation 期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2010, 卷号: 268, 期号: 2, 页码: 123-126
作者:  Zhao DG
收藏  |  浏览/下载：100/5  |  提交时间：2010/04/22
Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 054204
Ji L (Ji Lian); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhang LQ (Zhang Li-Qun); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Duan LH (Duan Li-Hong); Yang H (Yang Hui)
收藏  |  浏览/下载：108/5  |  提交时间：2010/05/24
DIODES  
A new p-n structure ultraviolet photodetector with p(-)-GaN active region 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 10, 页码: 7255-7260
Zhou M (Zhou Mei); Zhao DG (Zhao De-Gang)
收藏  |  浏览/下载：188/83  |  提交时间：2010/03/08
High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A
收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08
Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 19, 页码: art. no. 192107
Fan, HB; Sun, GS; Yang, SY; Zhang, PF; Zhang, RQ; Wei, HY; Jiao, CM; Liu, XL; Chen, YH; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：77/32  |  提交时间：2010/03/08
ZNO FILMS  GROWTH  DIODES  GAN  
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08

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