Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

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	Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure
	Ji L (Ji Lian) ; Zhang SM (Zhang Shu-Ming) ; Jiang DS (Jiang De-Sheng) ; Liu ZS (Liu Zong-Shun) ; Zhang LQ (Zhang Li-Qun) ; Zhu JJ (Zhu Jian-Jun) ; Zhao DG (Zhao De-Gang) ; Duan LH (Duan Li-Hong) ; Yang H (Yang Hui)
刊名	chinese physics letters
	2010
卷号	27 期号:5 页码:art. no. 054204
关键词	DIODES
通讯作者	ji, l, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jilian@red.semi.ac.cn ; smzhang@red.semi.ac.cn
合作状况	国内
英文摘要	ingan/gan multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. the laser diode consists of four emitter stripes which share common electrodes on one laser chip. an 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. the threshold current and voltage of the laser array diode are 2a and 10.5 v, respectively. a light output peak power of 12w under pulsed current injection at room temperature is achieved. we simulate the electric properties of gan based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type gan are two effective ways to improve the uniformity of carrier distribution in emitter stripes. two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. the laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. the full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t05:50:32z no. of bitstreams: 1 fabrication and characterization of high power ingan blue-violet lasers with an array structure .pdf: 545792 bytes, checksum: b183d70f202ca71a51fb8aa31726f02e (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:16:26z (gmt) no. of bitstreams: 1 fabrication and characterization of high power ingan blue-violet lasers with an array structure .pdf: 545792 bytes, checksum: b183d70f202ca71a51fb8aa31726f02e (md5); made available in dspace on 2010-05-24t07:16:26z (gmt). no. of bitstreams: 1 fabrication and characterization of high power ingan blue-violet lasers with an array structure .pdf: 545792 bytes, checksum: b183d70f202ca71a51fb8aa31726f02e (md5) previous issue date: 2010; national natural science fund of china 60976045 60506001 60836003 60776047 national basic research program of china 2007cb936700; 国内
学科主题	光电子学
收录类别	SCI
资助信息	national natural science fund of china 60976045 60506001 60836003 60776047 national basic research program of china 2007cb936700
语种	英语
公开日期	2010-05-24 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11234]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Ji L ,Zhang SM ,Jiang DS ,et al. Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure[J]. chinese physics letters,2010,27(5):art. no. 054204.
APA	Ji L .,Zhang SM .,Jiang DS .,Liu ZS .,Zhang LQ .,...&Yang H .(2010).Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure.chinese physics letters,27(5),art. no. 054204.
MLA	Ji L ,et al."Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure".chinese physics letters 27.5(2010):art. no. 054204.