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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文 Geneva, SWITZERLAND, OCT 02-06, 2017 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie 收藏  |  浏览/下载：38/0  |  提交时间：2018/10/08 Charge sharing  single-event upset (SEU)  static random access memory  total ionizing dose (TID)   Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa) 收藏  |  浏览/下载：48/0  |  提交时间：2018/05/15 Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ] 收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27 Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)   Simulation of Parasitic Bipolar Transistor Effect in Nanometric SRAM 期刊论文 Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2018, 卷号: 46, 页码: 2495-2503 作者:  Zhao, Wen;  Guo, Xiao-Qiang;  Chen, Wei;  Luo, Yin-Hong;  Wang, Han-Ning 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26 Bipolar effects  Electric potential difference  High linear energy transfers  Incident angles  Multiple cell upset  Nanometrics  Parasitic bipolar transistors  Relative positions   Average 7T1R Nonvolatile SRAM With R/W Margin Enhanced for Low-Power Application 期刊论文 IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2018, 卷号: Vol.26 No.3, 页码: 584-588 作者:  Lu,Wenjuan;  Chen,Junning;  Zhang,Jingbo;  Peng,Chunyu;  Lin,Zhiting 收藏  |  浏览/下载：17/0  |  提交时间：2019/04/22 MEMORY  MODEL  CELL   Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM under Different Measurement Conditions 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 5, 页码: 1119-1126 作者:  Liu, TQ;  Liu, J;  Xi, K;  Zhang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2019/08/04