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浏览/检索结果: 共12条，第1-10条 帮助 限定条件 发表日期：2018    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation 会议论文 作者:  Zhang, Liqing;  Zhang, Chonghong;  Huang, Qing;  Ding, Zhaonan;  Yan, Tingxing 收藏  |  浏览/下载：40/0  |  提交时间：2019/03/27 SiC fibers  Ar-ion irradiation  TEM  Raman scattering spectra  SEM   Effects of characteristic of green body on the microstructure and properties of reaction bonded silicon carbide 会议论文 作者:  Xu, Shao Chun;  Wang, Zi Jing;  Zhang, Ya Ming;  Zhi, Qiang;  Matsushita, Jun-Ichi 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/19 Carboxy-methyl cellulose  Different binders  Microstructure and properties  Optimum conditions  Reaction-bonded  Reaction-bonded silicon carbides  Sintering temperatures  Water-soluble binders   The preparation and properties of clay bonded silicon carbide by using silicon carbide dusting powder 会议论文 作者:  Xu, Shaochun;  Wang, Zijing;  Zhang, Yaming;  Zhi, Qiang;  Wang, Xudong 收藏  |  浏览/下载：11/0  |  提交时间：2019/11/19 Ball-milling methods  Carbide refractories  Microstructure and mechanical properties  Optimum conditions  Planetary ball milling  Pressureless sintering process  Sintering additives  Sintering temperatures   Capacitance–Voltage Measurements and Bias Temperature Stress Induced Flatband Voltage Instability in 4H-SiC MOS Capacitors 会议论文 Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) 作者:  Yang C(杨超);  Wang DJ(王德君) 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/02 Dynamic Performance of 4H-SiC Power MOSFETs and Si IGBTs over Wide Temperature Range 会议论文 作者:  Qi, Jinwei;  Tian, Kai;  Mao, Zhangsong;  Yang, Song;  Song, Wenjie 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 MOSFETs  dynamic on-resistance  silicon carbide (SiC)  cryogenic temperature  switching transient   An Active Gate Driver for Improving Switching Performance of SiC MOSFET 会议论文 2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2018-01-01 作者:  Yang, Yuan;  Wang, Yan;  Wen, Yang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20 Silicon Carbide (SiC) devices  overvoltage  switching losses  An active gate driver (AGD)   4H-SiC Light Triggered Thyristor with Gradually Doped Thin n-base 会议论文 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01 作者:  Wang, Xi;  Pu, Hongbin;  Liu, Qing;  Hu, Dandan;  Wang, Yafang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/20 silicon carbide  light triggered thyristor  gradually doped  thin n-base   Origin analysis and elimination of obtuse triangular defects in 4° off 4H-SiC epitaxy 会议论文 International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, WA, United states, 2017-09-17 作者:  Mao, K.L.;  Wang, Y.M.;  Li, B.;  Zhao, G.Y. 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/20 Design of SiC-Based Single-Phase Quasi-Z-Source Inverter 会议论文 PROCEEDINGS 2018 IEEE 12TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG 2018), 2018-01-01 作者:  Liu, Yushan;  Abu-Rub, Haitham;  Wu, Yichang;  Ghazi, Khalid Ahamed 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/30 Silicon carbide  single-phase inverter  quasi-Z-source inverter  switching frequency  power density   Development of Auto Infrared Photoelastic Microscope for Stress Measurement of Silicon 会议论文 Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018 作者:  Li, T.;  Yao, R.;  Yu, C.;  Su, F. 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Cracks  Elasticity  Electronics packaging  Light polarization  Microscopes  Optical devices  Silicon carbide  Silicon wafers  Stresses  Wafer bonding  Wide band gap semiconductors  Electronic Packaging  Heating platform  Phase difference  Quarter wave-plate  Si-based materials  Silicon-based materials  Stress birefringence  Temperature cycling tests  Three dimensional integrated circuits