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| 一种热量补偿结构在多晶硅定向凝固设备中的应用研究 期刊论文
2014
朱徐立; 洪永强
  收藏 | 浏览/下载：5/0 | 提交时间：2016/05/17
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| Direct characterization of ion implanted pyrolytic carbon coatings deposited from natural gas 期刊论文
Carbon, 2014, 卷号: 68, 页码: 95-103
X. J. He; J. L. Song; H. H. Xia; J. Tan; B. L. Zhang; Z. T. He; X. T. Zhou; Z. Y. Zhu; M. W. Zhao; X. D. Liu; L. Xu; S. Bai
收藏 | 浏览/下载：25/0 | 提交时间：2014/03/14
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| A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits 期刊论文
journal of display technology, 2014
Wang, Longyan; Sun, Lei; Han, Dedong; Wang, Yi; Chan, Mansun; Zhang, Shengdong
收藏 | 浏览/下载：5/0 | 提交时间：2015/11/10
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| 湿法提纯制备太阳能级硅过程的研究 学位论文
2014, 2014
刘瑞聪
收藏 | 浏览/下载：2/0 | 提交时间：2016/01/12
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| 铝诱导晶化法制备高质量多晶Si、SiGe材料的研究 学位论文
2014, 2014
孙钦钦
收藏 | 浏览/下载：5/0 | 提交时间：2016/01/12
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| Rapid solidification of polycrystalline silicon involves feeding the polycrystalline silicon into solidification device, performing directional solidification process, and freezing. 专利
申请日期: 2014-01-01, 公开日期: 2014-01-29
作者: JIANG D LI P REN S TAN Y SHI S
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/11 |
| Local heating solidification polycrystalline silicon impurity removing device, has furnace body whose lower part is connected with graphite pedestal, and moving shaft whose lower end is connected with control device in solid state. 专利
申请日期: 2014-01-01, 公开日期: 2014-11-05
作者: JIANG D LI P LIN H TAN Y SHI S WEN
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11 |
| Top electric beam local heating solidification polycrystalline silicon impurity removing device, has gun mounted on upper part of furnace body, where beam point of gun is located on inner side of crucible part. 专利
申请日期: 2014-01-01, 公开日期: 2014-11-05
作者: JIANG D LIN H TAN Y SHI S WANG P
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11 |
| Casting polycrystalline silicon ingot, comprises growing polycrystalline silicon in seven growth stages. 专利
申请日期: 2014-01-01, 公开日期: 2014-06-25
作者: JIANG D LI P REN S TAN Y SHI S
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11 |
| Trash function featured crucible pot, has pot body whose wall is formed with hole that is formed with collecting groove, where height of overflow hole is equal to that of pot body that is coated with polycrystalline silicon material. 专利
申请日期: 2014-01-01, 公开日期: 2014-11-05
作者: JIANG D LIN H TAN Y SHI S WEN S
收藏 | 浏览/下载：6/0 | 提交时间：2019/12/11 |
