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兰州理工大学 [17]

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	The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain 期刊论文 Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284 作者: Lu, Xuefeng; Li, Lingxia; Guo, Xin; Ren, Junqiang; Xue, Hongtao 收藏 \| 浏览/下载：15/0 \| 提交时间：2022/08/09 Binding energy Calculations Gallium compounds Graphene Ground state Heterojunctions III-V semiconductors Ohmic contacts Schottky barrier diodes Strain Thermoelectric equipment Van der Waals forces Electronic characteristics Graphene/GaP In-plane strains Interlayer coupling Layer-spacing Micro/nano Nanoelectronic devices P-type Schottky barriers Schottky contacts
	Insight into electronic structure and photocatalytic character of GaSe/MoS2 heterostructure by first-principles investigation 期刊论文 Solid State Communications, 2022, 卷号: 353 作者: Lu, Xuefeng; Cui, Tingshu; Ren, Junqiang; Guo, Xin; Xue, Hongtao 收藏 \| 浏览/下载：32/0 \| 提交时间：2022/08/09 Binding energy Calculations Energy gap Gallium compounds Hydrogen production Lattice mismatch Layered semiconductors Light Light absorption Molybdenum compounds Photocatalytic activity Redox reactions Selenium compounds Semiconductor quantum wells Electronic.structure First principle calculations First principles First-principles investigations Gase/MoS2 Photo-catalytic Photocatalytic character Photocatalytic property Structure property Two-dimensional
	Influence of S and Se doping on the electronic characteristic and optical properties of T-carbon by first-principles calculation 期刊论文 MODERN PHYSICS LETTERS B, 2022, 卷号: 36, 期号: 12 作者: Lu, Xuefeng; Zhang, Yongxiang; Guo, Xin; Ren, Junqiang; Xue, Hongtao 收藏 \| 浏览/下载：18/0 \| 提交时间：2022/06/21 T-carbon doping formation energy electronic property first principles
	Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure 期刊论文 COMPUTATIONAL MATERIALS SCIENCE, 2021, 卷号: 198 作者: Lu, Xuefeng; Li, Lingxia; Guo, Xin; Ren, Junqiang; Xue, Hongtao 收藏 \| 浏览/下载：5/0 \| 提交时间：2021/10/14 Graphene InP Heterostructure Vertical strain Electric field Schottky barrier
	Enhanced electrochemical performance and storage mechanism of LiFePO4 doped by Co, Mn and S elements for lithium-ion batteries 期刊论文 ELECTROCHIMICA ACTA, 2021, 卷号: 388 作者: Cui, Zhihong; Guo, Xin; Ren, Junqiang; Xue, Hongtao; Tang, Fuling 收藏 \| 浏览/下载：9/0 \| 提交时间：2021/10/14 LiFePO4 Diffusion rate Operating voltage Discharge curve Electrochemical performance
	Electronic property of intrinsic point defect system on beta-Si3N4 (0001) surface 期刊论文 MODERN PHYSICS LETTERS B, 2021, 卷号: 35, 期号: 21 作者: Li, Lingxia; Lu, Xuefeng; Luo, Jianhua; Guo, Xin; Ren, Junqiang 收藏 \| 浏览/下载：22/0 \| 提交时间：2021/10/14 beta-Si3N4 electrical property vacancy interstitial defect
	Shear deformation mechanical performance of Ni-Co alloy nanoplate by molecular dynamics simulation 期刊论文 MODERN PHYSICS LETTERS B, 2021, 卷号: 35, 期号: 19 作者: Gao, Qing; Lu, Xuefeng; Guo, Xin; Ren, Junqiang; Xue, Hongtao 收藏 \| 浏览/下载：3/0 \| 提交时间：2021/10/14 Ni-Co alloy shear deformation dislocation molecular dynamic simulation
	Research on the electronic properties of graphene/β-Si3N4 (0001) heterojunction 期刊论文 Vacuum, 2021, 卷号: 184 作者: Cui, Zhihong; Lu, Xuefeng; Luo, Jianhua; Guo, Xin; Ren, Junqiang 收藏 \| 浏览/下载：11/0 \| 提交时间：2021/03/02 Binding energy Electric fields Electronic properties Energy gap Heterojunctions Microelectronics Silicon Van der Waals forces Built-in electric fields DTF calculations Electronic properties of graphene Electrons and holes Equilibrium interlayers Interlayer spacings Micro-electronic devices Population analysis
	Research on the electronic properties of graphene/beta-Si3N4 (0001) heterojunction 期刊论文 VACUUM, 2021, 卷号: 184, 页码: - 作者: Cui, Zhihong; Lu, Xuefeng; Luo, Jianhua; Guo, Xin; Ren, Junqiang 收藏 \| 浏览/下载：3/0 \| 提交时间：2021/03/12 GRAPHENE MONOLAYER GROWTH SURFACE SYSTEM FILMS
	Effects of crystallographic orientation, temperature and void on tensile mechanical properties of Ni-Co single crystal nanopillars 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 870 作者: Dong, Changyu; Lu, Xuefeng; Yang, Panfeng; Guo, Xin; Ren, Junqiang 收藏 \| 浏览/下载：3/0 \| 提交时间：2021/06/03 Ni-Co alloy Deformation mechanism Stacking fault tetrahedron Prismatic dislocation loop Molecular dynamics simulation

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