中国开放科研知识云: 检索

验证码:

换一张

忘记密码？记住我

取消登录

CORC

首页
科研机构
检索
知识图谱
申请加入
托管服务

在结果中检索

科研机构

半导体研究所 [130]

内容类型

期刊论文 [117]

会议论文 [13]

发表日期

学科主题

半导体物理 [130]

知识图谱

CORC

已提交作品

待认领作品

已认领作品

未提交全文

浏览/检索结果: 共130条，第1-10条

帮助

限定条件	学科主题：半导体物理

已选(0)清除条数/页：排序方式：
	Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102 作者: Li MF 收藏 \| 浏览/下载：105/7 \| 提交时间：2011/07/05 molecular beam epitaxy anti-phase domain GaAs/Ge interface CHEMICAL VAPOR-DEPOSITION JUNCTION SOLAR-CELLS DOMAIN-FREE GROWTH TEMPERATURE QUALITY FUTURE
	Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy 期刊论文 physica status solidi(c) current topics in solid state physics, 2011, 卷号: 8, 期号: 2, 页码: 393-395 Wang, S.L.; Meng, K.K.; Chen, L.; Xu, P.F.; Meng, H.J.; Lu, J.; Zhao, J.H. 收藏 \| 浏览/下载：68/0 \| 提交时间：2012/06/14 Drop formation Epitaxial growth Ferromagnetic materials Ferromagnetism Gallium alloys High resolution transmission electron microscopy Magnetic semiconductors Manganese Semiconducting silicon Semiconductor growth Semiconductor quantum dots
	Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain 期刊论文 journal of raman spectroscopy, 2011, 卷号: 42, 期号: 6, 页码: 1388-1391 Zhang, J; Tan, PH; Zhao, WJ; Lu, J; Zhao, JH 收藏 \| 浏览/下载：22/0 \| 提交时间：2012/01/06 Raman spectroscopy ultrathin Fe(3)O(4) film crystal orientation strain phonon strain-shift coefficient PULSED-LASER DEPOSITION THIN-FILMS SPIN-TRANSPORT MAGNETITE SEMICONDUCTORS SPINTRONICS SCATTERING CORROSION DEVICES GROWTH
	Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文 physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850 Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J 收藏 \| 浏览/下载：95/5 \| 提交时间：2011/07/05 conductivity doping photoluminescence pulsed laser deposition ZnO ZINC-OXIDE ELECTRICAL-PROPERTIES OPTICAL-PROPERTIES OXYGEN-PRESSURE PHOTOLUMINESCENCE LUMINESCENCE VIOLET GROWTH FABRICATION DEPENDENCE
	Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文 nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359 作者: Tan PH 收藏 \| 浏览/下载：52/5 \| 提交时间：2011/07/05 CdSe nanowires photoluminescence CHEMICAL-VAPOR-DEPOSITION SHAPE-SELECTIVE SYNTHESIS LIQUID-SOLID MECHANISM OPTICAL-PROPERTIES SILICON NANOWIRES SI NANOWIRES ZNSE NANOWIRES SEMICONDUCTOR NANOCRYSTALS STRUCTURAL-PROPERTIES EPITAXIAL-GROWTH
	Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004 He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan 收藏 \| 浏览/下载：73/0 \| 提交时间：2012/06/14 Atomic force microscopy Buffer layers Epitaxial growth Gallium alloys Gallium arsenide Germanium Growth temperature High resolution transmission electron microscopy Molecular beam epitaxy Molecular beams Semiconducting gallium Semiconductor device structures Semiconductor quantum wells
	Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.20703 作者: Yang XH; He JF 收藏 \| 浏览/下载：57/7 \| 提交时间：2011/07/05 V-groove substrate quantum wires GaAs EPITAXIAL-GROWTH TRANSISTOR
	Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文 journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 54320 Ning JQ; Xu SJ; Ruan XZ; Ji Y; Zheng HZ; Sheng WD; Liu HC 收藏 \| 浏览/下载：14/0 \| 提交时间：2012/01/06 WELLS RELAXATION HOLE PHOTOLUMINESCENCE SEMICONDUCTORS LOCALIZATION TRANSITIONS EXCITONS CARRIERS GROWTH
	2-5m InAs/GaSb superlattices infrared photodetector 期刊论文 hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406 Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan 收藏 \| 浏览/下载：20/0 \| 提交时间：2012/06/14 Alignment Atomic force microscopy Atomic spectroscopy Detectors Epitaxial growth Gallium alloys Gallium arsenide Indium arsenide Infrared detectors Molecular beam epitaxy Molecular beams Optoelectronic devices Semiconducting gallium Superlattices Transmission electron microscopy X ray diffraction
	First principles study of the electronic properties of twinned SiC nanowires 期刊论文 journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191 作者: Li JB 收藏 \| 浏览/下载：100/6 \| 提交时间：2011/07/05 Twinned SiC nanowires Electronic properties Ab initio Modeling and simulation SILICON-CARBIDE NANOWIRES FIELD-EMISSION PROPERTIES MOLECULAR-BEAM EPITAXY INAS NANOWIRES GROWTH NANOTUBES NITRIDE DIFFUSION NANORODS ENERGY

相关链接
欧盟学术资源开放存取平台
CALIS高校机构知识库
台湾学术机构典藏
香港机构知识库整合系统
中国科学院机构知识库网格系统

CORC
关于我们
服务条款
隐私条款

联系我们
0931-8270076
cspace@llas.ac.cn
China-OR

中文简体

©版权所有 ©2017 CSpace - Powered by CSpace