Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition

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	Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition
	Zhu BL ; Zhu SJ ; Zhao XZ ; Su FH ; Li GH ; Wu XG ; Wu J
刊名	physica status solidi a-applications and materials science
	2011
卷号	208 期号:4 页码:843-850
关键词	conductivity doping photoluminescence pulsed laser deposition ZnO ZINC-OXIDE ELECTRICAL-PROPERTIES OPTICAL-PROPERTIES OXYGEN-PRESSURE PHOTOLUMINESCENCE LUMINESCENCE VIOLET GROWTH FABRICATION DEPENDENCE
ISSN号	1862-6300
通讯作者	zhu, bl, wuhan univ sci & technol, minist educ, key lab ferrous met & resources utilizat, wuhan 430081, peoples r china. zhubailin97@hotmail.com
学科主题	半导体物理
收录类别	SCI
资助信息	china postdoctoral science foundation
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	undoped and 0.56 at.% sb-doped zno thin films were prepared by pulsed laser deposition (pld) under vacuum and an oxygen pressure of 0.2 pa with sintered ceramic as targets. the effects of sb doping and deposition atmosphere on structure and optical-electrical properties of the films were studied by x-ray diffraction (xrd), scanning probe microscopy (spm), hall effect measurement, transmittance spectra, and photoluminescence (pl) spectra. the results showed that undoped and sb-doped films deposited under vacuum had better crystallinity, higher carrier concentration, lower bandgap (e-g), and single violet emission as compared with the films deposited in an oxygen pressure of 0.2 pa. compared with undoped zno film, sb-doped zno film had higher carrier concentration and almost uniform e-g in both atmospheres, and it exhibited obviously improved crystallinity and green emission under an oxygen pressure of 0.2 pa. the results implied that the deposition atmosphere strongly affected the growth kinetics of the films and intrinsic defect in the films, and sb doping seemed also to affect the growth kinetics of the films under certain conditions and introduced sb-zn defects and possibly sb-zn-2v(zn) defects, thus the structure and optical-electrical properties of the films were modified by the deposition atmosphere and sb doping. (c) 2011 wiley-vch verlag gmbh & co. kgaa, weinheim
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20867]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Zhu BL,Zhu SJ,Zhao XZ,et al. Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition[J]. physica status solidi a-applications and materials science,2011,208(4):843-850.
APA	Zhu BL.,Zhu SJ.,Zhao XZ.,Su FH.,Li GH.,...&Wu J.(2011).Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition.physica status solidi a-applications and materials science,208(4),843-850.
MLA	Zhu BL,et al."Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition".physica status solidi a-applications and materials science 208.4(2011):843-850.