QQ客服 官方微博 反馈留言

浏览/检索结果: 共16条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors 期刊论文 chin. phys. lett., 2015, 卷号: 32, 期号: 12, 页码: 127301 Yan Jun-Da; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Jiang Li-Juan; Yin Hai-Bo; Feng Chun; Wang Cui-Mei; Qu Shen-Qi; Gong Jia-Min; Zhang Bo; Li Bai-Quan; Wang Zhan-Guo; Hou Xun 收藏  |  浏览/下载：31/0  |  提交时间：2016/03/29 Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文 phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161 He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29 A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文 chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504 Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang 收藏  |  浏览/下载：27/0  |  提交时间：2016/03/29 Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy 期刊论文 rare metals, 2014, 卷号: 33, 期号: 6, 页码: 646-651 Liu, Shuai; Yu, Guang-Hua; Yang, Mei-Yin; Ju,Hai-Lang; Li, Bao-He; Chen, Xiao-Bai 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/19 Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文 journal of applied physics, 2014, 卷号: 116, 期号: 5, 页码: 054502 Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X 收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25 Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306 Deng, QW; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Lin, DF; Li, JM; Wang, ZG; Hou, X 收藏  |  浏览/下载：16/0  |  提交时间：2012/01/06 QUANTUM DOTS  SOLAR-CELLS  GROWTH  FILMS  GAN   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  BAND-GAP  MG  PHOTOLUMINESCENCE  INGAN  DEPENDENCE  STRAIN  ENERGY  INN   An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: art. no. 265103 作者:  Yin HB;  Lin DF;  Hou QF;  Deng QW 收藏  |  浏览/下载：36/2  |  提交时间：2011/07/07 FUNDAMENTAL-BAND GAP  PHASE-SEPARATION  EFFICIENCY  INN  EMISSION  LAYERS  MODEL   Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.18401 作者:  Deng QW;  Hou QF;  Bi Y;  Yin HB 收藏  |  浏览/下载：41/5  |  提交时间：2011/07/05 EFFICIENCY   High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002 Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin 收藏  |  浏览/下载：21/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium nitride