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CORC

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Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates 期刊论文
CRYSTENGCOMM, 2020, 卷号: 22, 期号: 18, 页码: 3198-3205
作者:  Weijiang Li;   Liang Guo;   Shengnan Zhang;   Qiang Hu;   Hongjuan Cheng;   Junxi Wang;   Jinmin Li;   Tongbo Wei
收藏  |  浏览/下载：29/0  |  提交时间：2021/06/17
(100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission† 期刊论文
CRYSTENGCOMM, 2020, 卷号: 22, 期号: 18, 页码: 3122-3129
作者:  Weijiang Li;   Liang Guo;   Shengnan Zhang;   Qiang Hu;   Hongjuan Cheng;   Junxi Wang;   Jinmin Li;   Tongbo Wei
收藏  |  浏览/下载：30/0  |  提交时间：2021/06/16
Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
作者:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
收藏  |  浏览/下载：35/0  |  提交时间：2020/07/30
Improved Performance in GeSn/SiGeSn TFET by Hetero-Line Architecture With Staggered Tunneling Junction 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 4, 页码: 1985-1989
作者:  Hongjuan Wang ;   Genquan Han ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Yan Liu ;   Jincheng Zhang;   Yue Hao;   Senior Member,IEEE
收藏  |  浏览/下载：26/0  |  提交时间：2020/07/30
Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
作者:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
收藏  |  浏览/下载：33/0  |  提交时间：2020/07/30
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 3, 页码: 444-447
作者:  Hongjuan Wang;   Xiangwei Jiang ;   Member, IEEE ;   Nuo Xu;   Member, IEEE ;   Genquan Han ;   Member, IEEE ;   Yue Hao;   Senior Member, IEEE ;   Shu-Shen Li;   David Esseni;   Fellow, IEEE
收藏  |  浏览/下载：37/0  |  提交时间：2019/11/18
Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction 期刊论文
Japanese Journal of Applied Physics, 2017, 卷号: 56, 期号: 4, 页码: 04CD07
作者:  Hongjuan Wang;  Genquan Han;  Xiangwei Jiang;  Yan Liu;  Chunfu Zhang
收藏  |  浏览/下载：18/0  |  提交时间：2018/06/15
Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文
international journal of thermophysics, 2015, 卷号: 36, 页码: 980–986
Yan Liu; Jing Yan; Hongjuan Wang; Buwen Cheng; Genquan Han
收藏  |  浏览/下载：24/0  |  提交时间：2016/03/22
Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain 期刊论文
aip advances, 2015, 卷号: 5, 页码: 057145
Genquan Han; Yibo Wang; Yan Liu; Hongjuan Wang; Mingshan Liu; Chunfu Zhang; Jincheng Zhang; Buwen Cheng; Yue Hao
收藏  |  浏览/下载：18/0  |  提交时间：2016/03/22
Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文
semiconductor science and technology, 2014, 卷号: 29, 期号: 11, 页码: 115027
Liu, Yan; Yan, Jing; Liu, Mingshan; Wang, Hongjuan; Zhang, Qingfang; Zhao, Bin; Zhang, Chunfu; Cheng, Buwen; Hao, Yue; Han, Genquan
收藏  |  浏览/下载：18/0  |  提交时间：2015/03/19

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