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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Assessing Polycentric Urban Development in Mountainous Cities: The Case of Chongqing Metropolitan Area, China 期刊论文 SUSTAINABILITY, 2019, 卷号: 11, 期号: 10 作者:  Liu, Yong;  Fan, Peilei;  Yue, Wenze;  Huang, Jingnan;  Li, Dong 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/05 mountainous city  polycentricity  urban form  morphological  functional   Assessing Polycentric Urban Development in Mountainous Cities: The Case of Chongqing Metropolitan Area, China 期刊论文 SUSTAINABILITY, 2019, 卷号: 11, 期号: 10 作者:  Liu, Yong;  Fan, Peilei;  Yue, Wenze;  Huang, Jingnan;  Li, Dong 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/05 mountainous city  polycentricity  urban form  morphological  functional   Effects of photo generated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells 期刊论文 Materials Research Express, 2019, 卷号: 6, 页码: 076203 作者:  Wei Liu ;  Feng Liang ;  Degang Zhao ;  Jing Yang ;  Desheng Jiang ;  Jianjun Zhu ;   Zongshun Liu 收藏  |  浏览/下载：3/0  |  提交时间：2020/07/31 Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文 Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280 作者:  Shuangtao Liu;  Jing Yang;  Degang Zhao;  Desheng Jiang;  Jianjun Zhu;  Feng Liang;  Ping Chen;  Zongshun Liu;  Yao Xing;  Liyuan Peng 收藏  |  浏览/下载：7/0  |  提交时间：2020/07/31 Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence 期刊论文 NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14, 页码: 88 作者:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang 收藏  |  浏览/下载：6/0  |  提交时间：2020/08/05 Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 806, 页码: 1077-1080 作者:  Xiaowei Wang ;   Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Jing Yang 收藏  |  浏览/下载：8/0  |  提交时间：2020/08/04 Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文 Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153 作者:  Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang 收藏  |  浏览/下载：7/0  |  提交时间：2020/07/31 Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文 Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951 作者:  FENG LIANG ;   DEGANG ZHAO ;   DESHENG JIANG ;   ZONGSHUN LIU ;   JIANJUN ZHU ;   PING CHEN ;   JING YANG ;   LIQUN ZHANG 收藏  |  浏览/下载：4/0  |  提交时间：2020/07/31 Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 790, 页码: 197-202 作者:  Xiaowei Wang ;   Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Jing Yang ;   Wenjie Wang 收藏  |  浏览/下载：4/0  |  提交时间：2020/08/05