| Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics | |
| Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang | |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 2019 | |
| 卷号 | 790页码:197-202 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29733]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang. Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,790:197-202. |
| APA | Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang.(2019).Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics.JOURNAL OF ALLOYS AND COMPOUNDS,790,197-202. |
| MLA | Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang ; Wenjie Wang."Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics".JOURNAL OF ALLOYS AND COMPOUNDS 790(2019):197-202. |
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