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Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.)
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4H-SiC  


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