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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：47/0  |  提交时间：2011/07/26 Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP 收藏  |  浏览/下载：222/40  |  提交时间：2010/03/29 surface morphology   Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ 收藏  |  浏览/下载：114/18  |  提交时间：2010/03/29 THERMALLY STIMULATED CURRENT  GALLIUM NITRIDE  DEFECTS   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：132/26  |  提交时间：2010/03/29 anodic alumina films   Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文 international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999 作者:  Yu F 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 solid phase epitaxy  silicon on sapphire (SOS)  carrier mobility   Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy 会议论文 9th international symposium on nondestructive characterization of materials, sydney, australia, jun 28-jul 02, 1999 Liu JP; Kong MY; Huang DD; Li JP; Sun DZ 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 STRAIN-SHIFT COEFFICIENTS  SI1-XGEX  SILICON  PHONONS   Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 STRANSKI-KRASTANOW GROWTH  QUANTUM DOTS  RELAXATION  INAS   Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Liu XF; Liu JP; Li JP; Wang YT; Li LY; Sun DZ; Kong MY; Lin LY 收藏  |  浏览/下载：4/0  |  提交时间：2010/11/15 LAYERS   Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy 会议论文 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 作者:  Yu F 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 SAPPHIRE FILMS  SILICON   JFET SOS devices: Processing and gamma radiation effects 会议论文 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 作者:  Yu F 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 SILICON