Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy

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	Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy
	Yu F
	1998
会议名称	5th international conference on solid-state and integrated circuit technology
会议日期	oct 21-23, 1998
会议地点	beijing, peoples r china
关键词	SAPPHIRE FILMS SILICON
页码	191-194
通讯作者	liu zl chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	cmos/sos devices have lower carriers mobility and higher channel leakage current than bulk silicon cmos devices. these mainly results from the defects of heteroepitaxial silicon film, especially from the defects near si-sapphire interface. this paper describes the experiment results of cmos/sos devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.
英文摘要	cmos/sos devices have lower carriers mobility and higher channel leakage current than bulk silicon cmos devices. these mainly results from the defects of heteroepitaxial silicon film, especially from the defects near si-sapphire interface. this paper describes the experiment results of cmos/sos devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:08z (gmt). no. of bitstreams: 1 2987.pdf: 199522 bytes, checksum: 35f0bed97f59ce88073378b0f35b4bd6 (md5) previous issue date: 1998; chinese inst electr.; ieee electron devices soc.; ieee solid state circuits soc.; japan soc appl phys.; ursi commiss d.; iee, electr div, uk.; korea inst telemat & electr.; ieee beijing sect.; mat res soc.; natl nat sci fdn china.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese inst electr.; ieee electron devices soc.; ieee solid state circuits soc.; japan soc appl phys.; ursi commiss d.; iee, electr div, uk.; korea inst telemat & electr.; ieee beijing sect.; mat res soc.; natl nat sci fdn china.
会议录	1998 5th international conference on solid-state and integrated circuit technology proceedings
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-4306-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13819]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu F. Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy[C]. 见:5th international conference on solid-state and integrated circuit technology. beijing, peoples r china. oct 21-23, 1998.