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Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文
Nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He
收藏  |  浏览/下载：20/0  |  提交时间：2016/04/08
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文
nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He
收藏  |  浏览/下载：12/0  |  提交时间：2016/03/29
Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects 期刊论文
applied physics letters, 2014, 卷号: 104, 期号: 2, 页码: 023512
Jiang, XW; Gong, J; Xu, N; Li, SS; Zhang, JF; Hao, Y; Wang, LW
收藏  |  浏览/下载：17/0  |  提交时间：2015/03/25
Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles 期刊论文
applied physics a, 2013, 页码: 1-7
Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu
收藏  |  浏览/下载：15/0  |  提交时间：2014/05/08
Multiphonon effects on the optical emission spectra of the nitrogen-vacancy center in diamond at different temperatures 期刊论文
journal of applied physics, 2012, 卷号: 111, 期号: 6, 页码: 63519
Ma, WL; Li, SS
收藏  |  浏览/下载：11/0  |  提交时间：2013/02/07
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102
He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC
收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06
First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 11, 页码: article no.113114
Jiang JW; Wang BS; Wang JS
收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125412
Zhang LX (Zhang Lixin); Zhou XF (Zhou Xiang-Feng); Wang HT (Wang Hui-Tian); Xu JJ (Xu Jing-Jun); Li JB (Li Jingbo); Wang EG (Wang E. G.); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：19/0  |  提交时间：2010/10/11
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27

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