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Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文
nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359
作者:  Tan PH
收藏  |  浏览/下载：52/5  |  提交时间：2011/07/05
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn 期刊论文
journal of crystal growth, 2011, 卷号: 316, 期号: 1, 页码: 145-148
Yang GD; Zhu F; Dong S
收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05
Electronic and Mechanical Coupling in Bent ZnO Nanowires 期刊论文
advanced materials, 2009, 卷号: 21, 期号: 48, 页码: 4937
Han XB; Kou LZ; Lang XL; Xia JB; Wang N; Qin R; Lu J; Xu J; Liao ZM; Zhang XZ; Shan XD; Song XF; Gao JY; Guo WL; Yu DP
收藏  |  浏览/下载：56/0  |  提交时间：2010/04/04
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902
Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD
收藏  |  浏览/下载：92/14  |  提交时间：2010/03/08
Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510
Jiang XW (Jiang Xiang-Wei); Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Luo JW (Luo Jun-Wei); Wang LW (Wang Lin-Wang)
收藏  |  浏览/下载：158/62  |  提交时间：2010/03/08
Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2005, 卷号: 278, 期号: 1-4, 页码: 728-733
作者:  Xu YQ
收藏  |  浏览/下载：17/0  |  提交时间：2010/03/17
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Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:  Xu YQ
收藏  |  浏览/下载：395/1  |  提交时间：2010/08/12
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL
收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29
Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy 期刊论文
journal of vacuum science & technology b, 2001, 卷号: 19, 期号: 1, 页码: 197-201
作者:  Xu B
收藏  |  浏览/下载：98/6  |  提交时间：2010/08/12

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