Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy

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	Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
	Xu YQ
刊名	journal of crystal growth
	2005
卷号	278 期号:1-4 页码:728-733
关键词	strain
ISSN号	0022-0248
通讯作者	niu, zc, chinese acad sci, inst semicond, natl lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn
中文摘要	long-wavelength high indium content inxga1-xas/gaas single/multi quantum wells (qws) structures have been successfully grown by molecular beam epitaxy. it is evidenced by x-ray measurements that the critical thickness of the well width of inxga1-xas/gaas qws with an indium content x of 47.5% can be raised up to 7nm without strain relation. 1.25μ m photoluminescence (pl) emission is obtained from the qws with narrower full-width at half maximum (fwhm) less than 30mev. our results are important basements which are useful for further fabricating gaas-based long-wavelength devices. © 2005 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8748]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu YQ. Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy[J]. journal of crystal growth,2005,278(1-4):728-733.
APA	Xu YQ.(2005).Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy.journal of crystal growth,278(1-4),728-733.
MLA	Xu YQ."Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy".journal of crystal growth 278.1-4(2005):728-733.