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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载:20/0  |  提交时间:2011/09/14
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:  Zhao DG
收藏  |  浏览/下载:61/0  |  提交时间:2010/08/12
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 516-520
Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH
收藏  |  浏览/下载:82/10  |  提交时间:2010/08/12
A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4 期刊论文
journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 245-249
Yu Z; Li DZ; Cheng BW; Huang CJ; Lei ZL; Yu JZ; Wang QM; Liang JW
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Preparation and characterization of erbium doped sol-gel silica glasses 会议论文
conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999
Lei HB; Yang QQ; Ou HY; Chen BW; Yu JZ; Wang QM; Xie DT; Wu JG; Xu DF; Xu GX
收藏  |  浏览/下载:14/0  |  提交时间:2010/10/29


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