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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102
作者:  Li MF
收藏  |  浏览/下载：105/7  |  提交时间：2011/07/05
Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073712
作者:  Wang Y;  Zhang XW;  Yin ZG
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：18/0  |  提交时间：2010/03/08
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327
She-Song, H; Zhi-Chuan, N; Feng, Z; Hai-Qiao, N; Huan, Z; Dong-Hai, W; Zheng, S
收藏  |  浏览/下载：42/3  |  提交时间：2010/03/08
Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As 期刊论文
ieee transactions on magnetics, 2008, 卷号: 44, 期号: 11, 页码: 2692-2695
作者:  Gan HD
收藏  |  浏览/下载：171/43  |  提交时间：2010/03/08
A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 2, 页码: 516-518
Hu, WG (Hu Wei-Guo); Liu, XL (Liu Xiang-Lin); Zhang, PF (Zhang Pan-Feng); Zhao, FA (Zhao Feng-Ai); Jiao, CM (Jiao Chun-Mei); Wei, HY (Wei Hong-Yuan); Zhang, RQ (Zhang Ri-Qing); Wu, JJ (Wu Jie-Jun); Cong, GW (Cong Guang-Wei); Pan, Y (Pan Yi)
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/29
Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582
Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan)
收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11
Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.242108
作者:  Zhang XW
收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11
Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 279-282
作者:  Xu YQ;  Yang XH
收藏  |  浏览/下载：76/0  |  提交时间：2010/04/11
The compact microcrystalline Si thin film with structure uniformity in the growth direction by hydrogen dilution profile 期刊论文
journal of applied physics, 2005, 卷号: 98, 期号: 9, 页码: art.no.093505
Gu J; Zhu MF; Wang LJ; Liu FZ; Zhou BQ; Zhou YQ; Ding K; Li GH
收藏  |  浏览/下载：82/18  |  提交时间：2010/03/17

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