Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy

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	Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy
	Wang Y; Zhang XW; Yin ZG
刊名	journal of applied physics
	2008
卷号	104 期号:7 页码:art. no. 073712
关键词	MOLECULAR-BEAM EPITAXY
ISSN号	0021-8979
通讯作者	gao, fb, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: fbgao@semi.ac.cn
中文摘要	the inasxsb1-x films were grown on (100) gasb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. the high-resolution x-ray diffraction results reveal that the single crystalline inasxsb1-x films with a midrange composition are epitaxially grown on the gasb substrates. temperature dependence of the hall mobility was theoretically modeled by considering several predominant scattering mechanisms. the results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (rt). furthermore, the inasxsb1-x films with the higher as composition exhibit the better crystalline quality and the higher mobility. the inas0.35sb0.65 film exhibits a hall mobility of 4.62x10(4) cm(2) v-1 s(-1). the cutoff wavelength of photoresponse is extended to about 12 mu m with a maximum responsivity of 0.21 v/w at rt, showing great potential for rt long-wavelength infrared detection. (c) 2008 american institute of physics. [doi: 10.1063/1.2989116]
学科主题	半导体物理
收录类别	SCI
资助信息	special funds for major state basic research project 2002cb311905 national natural science foundation of china 60576010 this work was supported by special funds for major state basic research project no. 2002cb311905 and by the national natural science foundation of china (grant no. 60576010).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6394]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Y,Zhang XW,Yin ZG. Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy[J]. journal of applied physics,2008,104(7):art. no. 073712.
APA	Wang Y,Zhang XW,&Yin ZG.(2008).Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy.journal of applied physics,104(7),art. no. 073712.
MLA	Wang Y,et al."Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy".journal of applied physics 104.7(2008):art. no. 073712.