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科研机构
半导体研究所 [29]
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期刊论文 [23]
会议论文 [6]
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2010 [1]
2008 [1]
2006 [1]
2003 [7]
2002 [4]
2001 [2]
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半导体材料 [29]
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Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.)
;
Zhang XW (Zhang X. W.)
;
Fan YM (Fan Y. M.)
;
Tan HR (Tan H. R.)
;
Yin ZG (Yin Z. G.)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/12/28
Cubic boron nitride
Doping
Ion beam assisted deposition
X-ray photoelectron spectroscopy
RAY PHOTOELECTRON-SPECTROSCOPY
VAPOR-DEPOSITION
SI
NUCLEATION
GROWTH
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ
;
Zhao, LB
;
Zhang, GY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
;
Jia, QJ
;
Guo, LP
;
Hu, TD
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  |  
浏览/下载:65/3
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE
Structure and visible luminescence of ZnO nanoparticles
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Peng, WQ (Peng, W. Q.)
;
Qu, SC (Qu, S. C.)
;
Cong, GW (Cong, G. W.)
;
Wang, ZG (Wang, Z. G.)
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  |  
浏览/下载:202/42
  |  
提交时间:2010/03/29
nanoparticles
Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate
期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959
作者:
Xu B
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  |  
浏览/下载:73/0
  |  
提交时间:2010/08/12
RELAXATION
SI
HETEROSTRUCTURES
KINETICS
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
作者:
Xu B
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/08/12
dislocation
interfaces
strain
molecular beam epitaxy
semiconductor IIIV materials
MOLECULAR-BEAM EPITAXY
SURFACE-MORPHOLOGY
TECHNOLOGY
GAAS(001)
BEHAVIOR
SI
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:
Zhao DG
收藏
  |  
浏览/下载:299/12
  |  
提交时间:2010/08/12
metalorganic chemical vapor deposition
nitrides
semiconductor III-V materials
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
CHEMICAL-VAPOR-DEPOSITION
INTERMEDIATE LAYER
ALAS
ALN
SURFACES
SILICON
FILMS
The growth morphologies of GaN layer on Si(111) substrate
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA
;
Liu XL
;
Lu DC
;
Yuan HR
;
Hu GQ
;
Wang XH
;
Wang ZG
;
Duan XF
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  |  
浏览/下载:21/0
  |  
提交时间:2010/08/12
Si(111) substrate
heteroepitaxy
metalorganic chemical vapor deposition
GaN
LIGHT-EMITTING-DIODES
CHEMICAL-VAPOR-DEPOSITION
NUCLEATION LAYERS
BUFFER LAYER
SILICON
SAPPHIRE
NITRIDE
EPITAXY
STRESS
STRAIN
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate
期刊论文
journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
作者:
Li DB
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/08/12
nanostructures
stretched exponential
time-resolved photolummescence
metalorganic vapor phase epitaxy
nitrides
InAlGaN
INXALYGA1-X-YN QUATERNARY ALLOYS
TIME-RESOLVED PHOTOLUMINESCENCE
MULTIPLE-QUANTUM WELLS
ALINGAN/GAN HETEROSTRUCTURES
GAN
DECAY
LUMINESCENCE
SAPPHIRE
DEVICES
SILICON
Violet/blue photoluminescence from CeO2 thin film
期刊论文
chinese science bulletin, 2003, 卷号: 48, 期号: 12, 页码: 1198-1200
Chai CL
;
Yang SY
;
Liu ZK
;
Liao MY
;
Chen NF
收藏
  |  
浏览/下载:253/3
  |  
提交时间:2010/08/12
cerium dioxide thin film
PL
violet/blue
CERIUM OXIDE
DEPOSITION
INTERFACE
EMISSION
SILICON
GROWTH
Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260
Tan LW
;
Wang QY
;
Wang J
;
Yu YH
;
Liu ZL
;
Lin LY
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/08/12
heteroepitaxial growth
gamma-Al2O3
silicon
silicon on insulator
FILMS
SI
DEPOSITION
AL2O3
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