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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides 期刊论文 Physical Review B, 2017, 卷号: 96, 期号: 16, 页码: 165402 作者:  Zhi-Qiang Fan;  Xiang-Wei Jiang;  Jun-Wei Luo;  Li-Ying Jiao;  Ru Huang 收藏  |  浏览/下载：48/0  |  提交时间：2018/06/15 Role of defects in enhanced Fermi level pinning at interfaces between metals and transition metal dichalcogenides 期刊论文 PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 20, 页码: 205303 作者:  Le Huang;  Lin Tao;  Kai Gong;  Yongtao Li;  Huafeng Dong 收藏  |  浏览/下载：31/0  |  提交时间：2018/06/15 Photodetectors based on junctions of two-dimensional transition metal dichalcogenides 期刊论文 Chin. Phys. B, 2017, 卷号: 26, 期号: 3, 页码: 038504 作者:  Xia Wei;  Fa-Guang Yan;  Chao Shen;  Quan-Shan Lv;  Kai-You Wang 收藏  |  浏览/下载：18/0  |  提交时间：2018/07/02 Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers 期刊论文 Nanoscale, 2017, 卷号: 9, 页码: 19124 作者:  Lili Zhang;  Chenyu Wang;  Xue-Lu Liu;  Tao Xu;  Mingsheng Long 收藏  |  浏览/下载：54/0  |  提交时间：2018/06/15 Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides 期刊论文 acs appl mater interfaces, 2016, 卷号: 8, 期号: 24, 页码: 15574-15581 Yongtao Li; Yan Wang; Le Huang; Xiaoting Wang; Xingyun Li; Hui-Xiong Deng; Zhongming Wei; Jingbo Li 收藏  |  浏览/下载：23/0  |  提交时间：2017/03/16 Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate 期刊论文 condensed matter, 2016, 卷号: 27, 期号: 14, 页码: 145704 Xiao-Li Li; Xiao-Fen Qiao; Wen-Peng Han; Xin Zhang; Qing-Hai Tan; Tao Chen; Ping-Heng Tan 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/16 Excitons in monolayer transition metal dichalcogenides 期刊论文 journal of physics-condensed matter, 2015, 卷号: 27, 期号: 31, 页码: 315301 J Li; Y L Zhong; Dong Zhang 收藏  |  浏览/下载：12/0  |  提交时间：2016/04/08 Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material 期刊论文 chemical society reviews, 2015, 卷号: 44, 期号: 9, 页码: 2757-2785 Xin Zhang; Xiao-Fen Qiao; Wei Shi; Jiang-Bin Wu; De-Sheng Jiang; Ping-Heng Tan 收藏  |  浏览/下载：13/0  |  提交时间：2016/03/29 Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 2, 页码: 023512 Jiang, XW; Gong, J; Xu, N; Li, SS; Zhang, JF; Hao, Y; Wang, LW 收藏  |  浏览/下载：17/0  |  提交时间：2015/03/25 Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 19, 页码: 193510 Jiang, XW; Li, SS 收藏  |  浏览/下载：12/0  |  提交时间：2015/04/02