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科研机构
半导体研究所 [29]
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期刊论文 [26]
会议论文 [3]
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2011 [1]
2010 [1]
2009 [2]
2008 [2]
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2005 [1]
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半导体材料 [29]
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Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:
Xu B
;
Zhou GY
;
Ye XL
;
Zhang HY
收藏
  |  
浏览/下载:53/5
  |  
提交时间:2011/07/05
SELF-ORGANIZED ISLANDS
MOLECULAR-BEAM-EPITAXY
OPTICAL-PROPERTIES
SURFACES
EMISSION
DENSITY
SIZE
Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Liu JQ (Liu J. Q.)
;
Xu B (Xu B.)
;
Ye XL (Ye X. L.)
;
Wang ZG (Wang Z. G.)
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  |  
浏览/下载:264/60
  |  
提交时间:2010/09/07
Quantum dots
Temperature dependent
Photoluminescence
Surface localized centers
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:
Yang JK
;
Wei TB
;
Duan RF
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  |  
浏览/下载:73/3
  |  
提交时间:2010/03/08
VAPOR-PHASE EPITAXY
DISLOCATIONS
SUBSTRATE
LAYER
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:310/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 7, 页码: 2657-2660
Li, J
;
Wang, RZ
;
Lan, W
;
Zhang, XW
;
Duan, ZQ
;
Wang, B
;
Yan, H
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  |  
浏览/下载:53/2
  |  
提交时间:2010/03/08
CVD DIAMOND FILMS
WORK FUNCTION
PHOTOCATALYTIC ACTIVITY
AQUEOUS SUSPENSION
THIN-FILMS
DEGRADATION
MICROSCOPY
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:231/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
会议论文
15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005
作者:
Jin P
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  |  
浏览/下载:159/26
  |  
提交时间:2010/03/29
quantum dots
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
期刊论文
journal of luminescence, 2006, 卷号: 119, 期号: 0, 页码: 183-187
作者:
Jin P
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  |  
浏览/下载:55/0
  |  
提交时间:2010/04/11
quantum dots
exciton
photoluminescence
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
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  |  
浏览/下载:43/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Observation of intershell and hybridized energy states in InAs/GaAs quantum dots
期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 9, 页码: art.no.093104
作者:
Jin P
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  |  
浏览/下载:118/24
  |  
提交时间:2010/03/17
OPTICAL-PROPERTIES
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