Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

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	Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
	Jin P
刊名	journal of luminescence
	2006
卷号	119 期号:0 页码:183-187
关键词	quantum dots exciton photoluminescence
ISSN号	0022-2313
通讯作者	chen, zh, fudan univ, dept phys, surface phys lab, shanghai 200433, peoples r china. e-mail: zhanghai@fudan.edu.cn
中文摘要	we have investigated the evolution of exciton state filling in inas/gaas quantum dot (qd) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. in addition to the emission bands of exciton recombination corresponding to the atom-like s, p and d, etc. shells of qds, it was observed that some extra states v between the s and p shells, and d' between the p and d shells appear in the spectra with increasing number of excitons occupying the qds at a certain temperature. the emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in qds. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10702]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P. Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots[J]. journal of luminescence,2006,119(0):183-187.
APA	Jin P.(2006).Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots.journal of luminescence,119(0),183-187.
MLA	Jin P."Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots".journal of luminescence 119.0(2006):183-187.