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Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文
Chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: 6
作者:  Tang Hai-Ma;  Zheng Zhong-Shan;  Zhang En-Xia;  Yu Fang;  Li Ning
收藏  |  浏览/下载：104/0  |  提交时间：2019/05/12
Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers 期刊论文
journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102
Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia
收藏  |  浏览/下载：17/0  |  提交时间：2011/08/16
Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106106
Tang HM (Tang Hai-Ma); Zheng ZS (Zheng Zhong-Shan); Zhang EX (Zhang En-Xia); Yu F (Yu Fang); Li N (Li Ning); Wang NJ (Wang Ning-Juan)
收藏  |  浏览/下载：48/0  |  提交时间：2010/11/02
Reliable concentrated photovoltaic system with compound concentrator 会议论文
solar world congress of the international-solar-energy-society, beijing, peoples r china, sep 18-21, 2007
作者:  Huang TM
收藏  |  浏览/下载：34/0  |  提交时间：2010/03/09
Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation 期刊论文
journal of electronic materials, 2005, 卷号: 34, 期号: 11, 页码: l53-l56
Zhang EX; Sun JY; Chen J; Zhang ZX; Wang X; Li N; Zhang GQ; Liu ZL
收藏  |  浏览/下载：193/29  |  提交时间：2010/03/17
Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing 期刊论文
semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573
Yi WB; Zhang EX; Chen M; Li N; Zhang GQ; Liu ZL; Wang X
收藏  |  浏览/下载：179/57  |  提交时间：2010/03/09
LAYERS  
Design of Tapered Rib Spot-Size Converter with Double-Cladding Structure 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 8, 页码: 913-917
作者:  Chen Shaowu
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23
Studies of 6h-sic devices 期刊论文
Current applied physics, 2002, 卷号: 2, 期号: 5, 页码: 393-399
作者:  Wang, SR;  Liu, ZL
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Studies of 6H-SiC devices 会议论文
korea-china joint symposium on smiconductor physics and device applications, seoul, south korea, dec 05-09, 2001
Wang SR; Liu ZL
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
Studies of 6H-SiC devices 期刊论文
current applied physics, 2002, 卷号: 2, 期号: 5, 页码: 393-399
Wang SR; Liu ZL
收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12

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