Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers

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	Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers
	Zheng Zhongshan ; Liu Zhongli ; Li Ning ; Li Guohua ; Zhang Enxia
刊名	journal of semiconductors
	2010
卷号	31 期号:2 页码:99-102
中文摘要	to harden silicon-on-insulator (soi) wafers fabricated using separation by implanted oxygen (simox) to total-dose irradiation, the technique of nitrogen implantation into the buried oxide (box) layer of simox wafers can be used. however, in this work, it has been found that all the nitrogen-implanted box layers reveal greater initial positive charge densities, which increased with increasing nitrogen implantation dose. also, the results indicate that excessively large nitrogen implantation dose reduced the radiation tolerance of box for its high initial positive charge density.the bigger initial positive charge densities can be ascribed to the accumulation of implanted nitrogen near the si-box interface after annealing. on the other hand, in our work, it has also been observed that, unlike nitrogen-implanted box, all the fluorine-implanted box layers show a negative charge density. to obtain the initial charge densities of the box layers, the tested samples were fabricated with a metal-box-silicon (mbs) structure based on simox wafers for high-frequency capacitance-voltage (c-v) analysis.
学科主题	微电子学
收录类别	CSCD
语种	英语
公开日期	2011-08-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21682]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Zheng Zhongshan,Liu Zhongli,Li Ning,et al. Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers[J]. journal of semiconductors,2010,31(2):99-102.
APA	Zheng Zhongshan,Liu Zhongli,Li Ning,Li Guohua,&Zhang Enxia.(2010).Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers.journal of semiconductors,31(2),99-102.
MLA	Zheng Zhongshan,et al."Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers".journal of semiconductors 31.2(2010):99-102.