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Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127
作者:  Yang, ZK (Yang, Zhikang) [1] , [2];  Wen, L (Wen, Lin) [1];  Li, YD (Li, Yudong) [1];  Liu, BK (Liu, Bingkai) [1] , [2];  Fu, J (Fu, Jing) [1] , [2]
收藏  |  浏览/下载：18/0  |  提交时间：2022/06/21
Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761
作者:  Feng, J (Feng, Jie) [1] , [2];  Fu, J (Fu, Jing) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2];  Wen, L (Wen, Lin) [1] , [2];  Guo, Q (Guo, Qi) [1] , [2]
收藏  |  浏览/下载：22/0  |  提交时间：2022/03/24
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏  |  浏览/下载：38/0  |  提交时间：2022/03/24
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ]
收藏  |  浏览/下载：40/0  |  提交时间：2020/07/06
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:  Xi, SX (Xi, Shan-Xue)[ 1,2,3 ];  Zheng, QW (Zheng, Qi-Wen)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Cui, JW (Cui, Jiang-Wei)[ 1,2 ];  Wei, Y (Wei, Ying)[ 1,2 ]
收藏  |  浏览/下载：22/0  |  提交时间：2020/07/06
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors 期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ]
收藏  |  浏览/下载：21/0  |  提交时间：2020/12/09
Investigation of displacement damage to vertical-cavity surface-emitting red lasers due to 1 MeV electron radiation 期刊论文
AIP ADVANCES, 2020, 卷号: 10, 期号: 11, 页码: 1-6
作者:  Chen, JW (Chen, J. W.)[ 1,2 ];  Li, YD (Li, Y. D.)[ 1 ];  Heini, M (Heini, M.)[ 1 ];  Liu, BK (Liu, B. K.)[ 1,2 ];  Lei, QQ (Lei, Q. Q.)[ 1,2 ]
收藏  |  浏览/下载：24/0  |  提交时间：2021/01/05
Research on attitude measurement precision of star sensor influenced by space radiation damage 会议论文
Beijing, PEOPLES R CHINA, DEC 03-05, 2019
作者:  Feng, J (Feng Jie);  Li, YD (Li Yudong);  Guo, Q (Guo Qi)
收藏  |  浏览/下载：8/0  |  提交时间：2021/08/25
Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
作者:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY
收藏  |  浏览/下载：17/0  |  提交时间：2018/08/07
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
作者:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie)
收藏  |  浏览/下载：31/0  |  提交时间：2018/08/14

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