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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文 physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850 Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J 收藏  |  浏览/下载：95/5  |  提交时间：2011/07/05 conductivity  doping  photoluminescence  pulsed laser deposition  ZnO  ZINC-OXIDE  ELECTRICAL-PROPERTIES  OPTICAL-PROPERTIES  OXYGEN-PRESSURE  PHOTOLUMINESCENCE  LUMINESCENCE  VIOLET  GROWTH  FABRICATION  DEPENDENCE   Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文 physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125412 Zhang LX (Zhang Lixin); Zhou XF (Zhou Xiang-Feng); Wang HT (Wang Hui-Tian); Xu JJ (Xu Jing-Jun); Li JB (Li Jingbo); Wang EG (Wang E. G.); Wei SH (Wei Su-Huai) 收藏  |  浏览/下载：19/0  |  提交时间：2010/10/11 INITIO MOLECULAR-DYNAMICS  ELECTRON GASES  HETEROSTRUCTURES  TRANSITION   Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition 期刊论文 japanese journal of applied physics, 2008, 卷号: 47, 期号: 4, 页码: 2225-2229 part 1 Zhu, BL; Zhao, XZ; Xu, S; Su, FH; Li, GH; Wu, XG; Wu, J; Wu, R; Liu, J 收藏  |  浏览/下载：42/2  |  提交时间：2010/03/08 laser ablation  zinc oxide  deposition process  optical properties  electrical properties and measurements   Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 期刊论文 microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 504-509 Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 Czochralski method  growth from melt  semiconductor silicon  argon gas flow  computer simulation  oxygen content  FURNACE PRESSURE   Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN 期刊论文 journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6130-6134 Xu XL; Liu HT; Shi CS; Zhao YW; Fung S; Beling CD 收藏  |  浏览/下载：126/15  |  提交时间：2010/08/12 LIGHT-EMITTING DIODES  GALLIUM NITRIDE  YELLOW LUMINESCENCE  ELECTRON  PHOTOLUMINESCENCE  EPILAYERS  VACANCIES  INTERFACE  MECHANISM  ENERGY