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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD 期刊论文 journal of crystal growth, 2008, 卷号: 311, 期号: 1, 页码: 200-204 作者:  Jia CH 收藏  |  浏览/下载：253/27  |  提交时间：2010/03/08 Growth behavior  SrTiO3  MOCVD  ZnO   Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13 Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 scanning electron microscopy  X-ray diffraction  Metalorganic vapor phase epitaxy  selective area growth  gallium nitride  CUBIC GAN  OVERGROWN GAN  DEPOSITION  GAAS(100)   Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 会议论文 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Tan LW; Wang J; Wang QY; Yu YH; Lin LY 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/15 EPITAXIAL-GROWTH  AL2O3  SI   Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 399-403 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：84/11  |  提交时间：2010/08/12 X-ray diffraction  nitrides  semiconducting III-V materials  PHASE  FILMS   Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/15 X-ray diffraction  nitrides  semiconducting III-V materials  PHASE  FILMS   Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文 journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50 Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 microgravity  Chinese recoverable satellite  GaSb  InxGa1-xSb  dissolution  recrystallization  orientation  FLOATING-ZONE GROWTH  INXGA1-XSB CRYSTALS  GASB  MELT  INSB  DIFFUSION  SILICON  CONVECTION  STRIATION